January 5,2016
A16-039 Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
- Release Date:12-11-2015
- Open Date:01-11-2016
- Due Date:02-17-2016
- Close Date:02-17-2016
The goal is to develop a semiconductor material that exhibits properties of high k dielectric constant over a wide operating temperature range, low leakage current, high breakdown voltage, and provide very low 1/f noise and RTS noise characteristics for Readout Integrated Circuit (ROIC) capacitor implementation. In addition, the material should also be of good producibility, good reliability, and compatible with the current readout fabrication technology.